IGFET Schmitt circuit

Details IGFET Schmitt circuit IGFET Schmitt circuit

1982-04-30

1984-10-02

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307290, 307448, 307579, H03K 3356, H03K 1710, H03K 17687, H03K 1920

Patent

active

044750480

ABSTRACT:
A Schmidt circuit comprises a first series circuit including an impedance device and a series connection of a first and second MOS field effect transistors, and a second series circuit including a series connection of a third and fourth MOS field effect transistors. The first series circuit is connected between a voltage supply and the ground and the second series circuit is connected between the voltage supply and the junction of the first and second MOS field effect transistors. The gates, as commonly connected, of the first and second MOS field effect transistors are supplied with an input voltage, and the junction of the impedance device and the first MOS field effect transistor is connected to the gate of the third MOS field effect transistor, so that an output voltage is withdrawn therefrom.

REFERENCES:
patent: 3873856 (1975-03-01), Gerlach et al.
patent: 4000427 (1976-12-01), Hoffman
patent: 4071784 (1978-01-01), Maeder et al.
patent: 4242604 (1980-12-01), Smith
patent: 4295062 (1981-10-01), Mihalich et al.
patent: 4297596 (1981-10-01), Eckert
patent: 4379974 (1983-04-01), Plachno

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