Method and device for programming a non-volatile memory cell by

Details Method and device for programming a non-volatile memory cell by Method and device for programming a non-volatile memory cell by

1999-01-07

2000-02-22

Nguyen, Tan T.

Static information storage and retrieval

Floating gate

Particular biasing

36518528, 36518909, G11C 1600

Patent

active

06028790&

ABSTRACT:
A method and apparatus for programming a non-volatile memory cell wherein the rate of current flowing through the cell is controlled via a current limiter coupled to the source node of the memory cell. The rate of current through the current limiter controls the programming current rate through the memory cell. The current limiter is controlled by an input which is dependant upon the setting of a current through an associated current mirror device. The current mirror current is controlled by a pre-defined input condition on a current source. The mirror current is used by a biasing circuit to generate a proportional input to the current limiter device. The current source thereby controls the current limiter rate. The current source can be formed from the same process as the memory cells and its output will thereby vary with the conductivity of the formed devices. This variation in the current source output, and hence the current limiter current, can be used to compensate for the comparable conductivity variations in the memory cells. The programming current rate can thereby be controlled, and can additionally be controlled according to process variations in the memory cell devices.

REFERENCES:
patent: 5042009 (1991-08-01), Kazerounian et al.
patent: 5590070 (1996-12-01), Harrand et al.
patent: 5608676 (1997-03-01), Medlock et al.
patent: 5712815 (1998-01-01), Bill et al.
patent: 5959892 (1999-09-01), Lin et al.

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