Method of interface state reduction in MNOS capacitors

Details Method of interface state reduction in MNOS capacitors Method of interface state reduction in MNOS capacitors

1988-07-13

1989-06-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 12, 437 13, 437247, H01L 2100, H01L 2102, H01L 21477, H01L 2900

Patent

active

048409170

ABSTRACT:
A method to reduce the interface state density in MNOS (Conductor-Nitride-Oxide-Semiconductor) is disclosed. This method involves sintering an unpatterned Al film on top of an CVD oxide layer over MNOS capacitors to generate atomic hydrogen which diffuse through the nitride and oxide and passivate the interface states at Si/SiO.sub.2 interface.

REFERENCES:
patent: 3923559 (1975-12-01), Sinha

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