Method of fabricating a photoconductive detector of increased re

Coating processes – Electrical product produced – Photoelectric

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427259, 427265, 29572, 29578, 29579, B05D 512

Patent

active

040739694

ABSTRACT:
A method of fabricating a photoconductive detector of increased responsivity, such as an infrared detector, from a slab of N-type, intrinsic bulk semiconductor material comprises shielding part of the detector active area between the positive and negative contacts with a material limiting photon exposure of the active area to retain a reduced detector active area sufficiently spaced from the negative contact to permit negligible loss in responsivity due to recombination of the photogenerated hole carriers at the negative contact.

REFERENCES:
patent: 3013232 (1961-12-01), Lubin
patent: 3187414 (1965-06-01), Hagle et al.
patent: 3361594 (1968-01-01), Iles et al.
patent: 3671313 (1972-06-01), Reynolds
patent: 3842274 (1974-10-01), Greene et al.
patent: 3851174 (1974-11-01), Tynan et al.
patent: 3962778 (1976-06-01), Palmer

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