Heterojunction bipolar transistor with ballistic operation

Details Heterojunction bipolar transistor with ballistic operation Heterojunction bipolar transistor with ballistic operation

1987-12-22

1990-05-29

James, Andrew J.

357 16, 357 37, H01L 2972

Patent

active

049299972

ABSTRACT:
For improvement in operation speed, there is provided a heterojunction bipolar transistor comprising, (a) an emitter region formed of a first semiconductor material of a first conductivity type, (b) a base region formed of a second semiconductor material of a second conductivity type opposite to the first conductivity type and forming a first junction together with the emitter region, and (c) a collector region formed of a third semiconductor material of the first conductivity type and forming a second junction together with the base region, the heterojunction bipolar transistor has a plurality of abrupt potential discontinuities including first and second abrupt potential discontinuities produced in succession to provide kinetic energies to a carrier injected from the emitter region, respectively, and the first abrupt potential discontinuity is produced at one of the first and second junctions, thereby allowing the carrier to move over a distance longer than a mean free path of the carrier in the ballistic manner.

REFERENCES:
patent: 4719496 (1988-01-01), Capasso et al.
patent: 4794440 (1988-12-01), Capasso et al.

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