Trench bipolar transistor

Details Trench bipolar transistor Trench bipolar transistor

1988-06-29

1990-05-29

James, Andrew J.

357 55, 357 35, H01L 2972

Patent

active

049299964

ABSTRACT:
A bipolar transistor formed in a trench depression such that a single impurity diffusing step is effective to form a buried collector layer electrically connected to a vertical collector conductor. The lateral diffusion forming the vertical collector conductor is effective to form the conductor with a uniform vertical doping profile, thereby reducing non-uniform series collector resistance characteristics. A trench depression sidewall dielectric is formed, and the trench is filled with a transistor silicon material by a selective epitaxial process. Base and emitter region are then formed in the collector epitaxial material.

REFERENCES:
patent: 4528047 (1985-07-01), Beyer et al.
patent: 4547793 (1985-10-01), Bergeron
patent: 4717682 (1988-01-01), Taka et al.
patent: 4733287 (1988-03-01), Bower
patent: 4749661 (1988-06-01), Bower
patent: 4839309 (1989-06-01), Easter et al.
"A Flat-Panel Display Control IC with 150-V Drivers", Masatoshi Kimur Takeaki Okabe, Isao Shimizu, Yasuo Nagai and Kazuo Hoya, IEEE Journal of Solid-State Circuits, vol. SC-21, No. 6, Dec., 1986, pp. 971-975.
"A New Isolation Technology for Bipolar Devices by Low Pressure Selective Silicon Epitaxy", S. Hine, T. Hirao, S. Kayano, and N. Tsubouchi, LSI Research and Development Laboratory, Mitsubishi Electric Corp., Itami, Japan, pp. 116-117.
"Advanced Dielectric Isolation Through Selective Epitaxial Growth Techniques", John O. Borland, Clifford I. Drowley, Solid State Technology, Aug. 1985, pp. 141-148.

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