Patent
1988-04-04
1990-05-29
Mintel, William
357 2315, 357 59, 357 54, H01L 2714
Patent
active
049299948
ABSTRACT:
A solid-state imaging device uses an MIS light-receiving device having a multilayer film structure. The multilayer film structure is constituted in such a manner that intermediate films are interposed between a gate electrode disposed on a surface of a semiconductor with a gate insulating film therebetween. A protection film is formed above the gate electrode, and/or between the gate electrode and the gate insulating film. Each intermediate film has a refractive index of a value between those of the materials forming the above components. As a result of the thus-constituted multilayer film structure, light transmissivity can be improved, causing a reduction in deterioration in light sensitivity. Consequently, a solid-state imaging device, which has a highly sensitive MIS light-receiving device, can be obtained.
REFERENCES:
patent: 4223330 (1980-09-01), Koike et al.
patent: 4686559 (1987-08-01), Haskell
Abbas et al, "Improvement of the Gate-Region Integrity in FET Devices," IBM Technical Disclosure Bulletin, vol. 14, No. 11, Apr. 1972, 3348-50.
Bhattacharyya et al, "High-Density, Single-Device Memory Cell with Minimized Parasitic Leakage," IBM Technical Disclosure Bulletin, vol. 18, No. 6, Nov. 1975, p. 1756.
Mintel William
Olympus Optical Co,. Ltd.
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