Fuse construction of a semiconductor device

Details Fuse construction of a semiconductor device Fuse construction of a semiconductor device

1992-06-19

1994-07-19

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257665, H01L 2702

Patent

active

053311957

ABSTRACT:
At least one fusing electrode charging electrode portion is connected to an intermediate portion of a fuse body of a fuse that has the fuse body and connecting end electrode portions provided at both ends thereof. A fusing voltage for fusing the fuse is charged through this fusing voltage charging electrode portion. It allows the concentration of a current at a specific portion of the fuse body to assure fusing of the fuse body at the specified portion. In addition, it is not necessary to increase the overall resistance of the fuse, no problem will arise even when the fuse, and is used in the circuit.

REFERENCES:
patent: 4689550 (1987-08-01), Ujihara et al.
J. A. Yasaitis et al., "Low Resistance Laser Formed Lateral Links", IEEE Electron Device Letters, EDL-3, No. 7 (Jul. 1982) pp. 184-186.

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