Method of producing a semiconductor device

Details Method of producing a semiconductor device Method of producing a semiconductor device

1982-09-28

1984-10-02

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576E, 29578, 29580, 29591, 148175, 148187, 156643, 156653, 156657, 357 49, 357 50, H01L 2120, H01L 21302, H01L 2176

Patent

active

044739400

ABSTRACT:
In a process for producing a semiconductor device, having a thick silicon oxide layer, on an isolation region, an oxide layer is selectively formed on an area for providing the isolation region of the epitaxial layer. Then an anti-oxidation masking layer is selectively formed on the oxide layer. The semiconductor substrate is selectively oxidized using the anti-oxidation masking layer for forming the thick silicon oxide layer. The anti-oxidation masking layer on the silicon oxide layer, which corresponds to the area for providing the isolation region, is removed and impurities are introduced into the area for providing the isolation region. Then the semiconductor substrate is oxidized in an oxidizing atmosphere so that the impurities are activated to form an isolation region and an oxide layer on the isolation region, the oxide layer having an increased thickness. The thus-obtained thick silicon dioxide layer makes the parasitic capacitance between the conductive lines and the isolation region small.

REFERENCES:
patent: 3911471 (1975-10-01), Kooi et al.
patent: 4233091 (1980-11-01), Kawabe
patent: 4343080 (1982-08-01), Hataishi et al.
patent: 4376664 (1983-03-01), Hataishi et al.
patent: 4378260 (1983-03-01), Fukuda et al.

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