Method of making a buried crescent laser with air gap insulator

Details Method of making a buried crescent laser with air gap insulator Method of making a buried crescent laser with air gap insulator

1989-03-10

1990-05-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG95, 148DIG81, 148DIG104, 156649, 156662, 437 65, 437133, 437948, H01L 2120, H01L 21203

Patent

active

049295713

ABSTRACT:
A semiconductor laser includes a semiconductor substrate on which a longitudinal groove is provided in the resonator direction, a first semiconductor layer disposed on a region of the semiconductor substrate where the groove is not provided and forming a rectifying junction therewith, a first cladding layer provided on the semiconductor substrate in the groove, an active layer provided on the first cladding layer in the groove, and a second cladding layer provided directly on the active layer and opposite the first semiconductor layer with an interposed insulating layer, such as a gap void of solid material or a gap and current blocking material having only negligible parasitic capacitance.

REFERENCES:
patent: 3833435 (1974-09-01), Logan et al.
patent: 3865646 (1975-02-01), Logan et al.
patent: 3883219 (1975-05-01), Logan et al.
patent: 4728625 (1988-03-01), Namizaki et al.
patent: 4758535 (1988-07-01), Sakakibara et al.
"Design and Implementation of High-Speed InGaAsP Constricted-Mesa Lasers", Bowers et al, Technical Digest, Feb. 1986.
"High-Power 1.3 um InGaAsP P-Substrate Buried Crescent Lasers", Sakakibara et al, IEEE Journal of Lightwave Technology, vol. Lt-3, No. 5, Oct. 1985.

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