Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1997-04-28
2000-02-22
Bowers, Charles
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438253, H01L 2120
Patent
active
06027980&
ABSTRACT:
A decoupling capacitor incorporated into an integrated circuit. The capacitor is disposed over a first region of a substrate comprising electronic circuitry, and not over a second region of the substrate. The capacitor comprises a lower and an upper conductive layer separated by an interposing insulative layer. An additional insulative layer is disposed beneath the lower conductive layer while another insulative layer is disposed above the upper conductive layer, and the capacitor provides capacitance for the electronic circuitry.
REFERENCES:
patent: 4023197 (1977-05-01), Magdo et al.
patent: 4628406 (1986-12-01), Smith et al.
patent: 4803450 (1989-02-01), Burgess et al.
patent: 4855953 (1989-08-01), Tsukamoto et al.
patent: 4931411 (1990-06-01), Tigelaar et al.
patent: 5006481 (1991-04-01), Chan et al.
patent: 5056216 (1991-10-01), Madou et al.
patent: 5079670 (1992-01-01), Tigelaar et al.
patent: 5104822 (1992-04-01), Butler
patent: 5119154 (1992-06-01), Gnadinger
patent: 5126794 (1992-06-01), Altmann
patent: 5139971 (1992-08-01), Giridhar et al.
patent: 5165166 (1992-11-01), Carey
patent: 5210379 (1993-05-01), Okonogi et al.
patent: 5262596 (1993-11-01), Kawakami et al.
patent: 5308929 (1994-05-01), Tani et al.
patent: 5414221 (1995-05-01), Gardner
patent: 5472900 (1995-12-01), Vu et al.
patent: 5583739 (1996-12-01), Vu et al.
patent: 5691229 (1997-11-01), Okamura et al.
Roskos, H., et al.; "Propagation of Picosecond Electrical Pulses on a Silicon-Based Microstrip Line with Buried Cobalt Silicide Ground Plane"; Appl. Phys. Lett. 58 (23), Jun. 10, 1991; pp. 2604-2606.
Bowers Charles
Chen Jack
Intel Corporation
Kaplan David J.
LandOfFree
Method of forming a decoupling capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming a decoupling capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a decoupling capacitor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-520076