Fishing – trapping – and vermin destroying
Patent
1992-05-27
1994-07-19
Breneman, R. Bruce
Fishing, trapping, and vermin destroying
437242, H01L 2100, H01L 2102, H01L 21302, H01L 21463
Patent
active
053309367
ABSTRACT:
A method of producing a silicon nitride film free of photolithographty and dry etching processes and a method of fabricating a semiconductor memory cell device are disclosed. A first polycrystalline silicon film serving as a bottom electrode is selectively formed only on a silicon region of the substrate with a field oxide film and a silicon nitride film is selectively formed only on the first polycrystalline silicon film by selective chemical vapor deposition in which a source gas including a combination of both ammonia and either silane or dichlorosilane is doped with hydrogen chloride. Then, a second polycrystalline film serving as a top electrode is selectively formed on the silicon nitride film.
REFERENCES:
patent: 4298629 (1981-11-01), Nozaki et al.
patent: 5080933 (1992-01-01), Grupen-Shemansky et al.
Journal of Applied Physics vol. 63, Jan. 1988, No. 2, entitled, "Charge Transfer Adsorption in Silicon Vapor-Phase Epitaxial Growth," A. Ishitani, et al., cover page and pp. 390-394.
Japanese Journal of Applied Physics, vol. 29, No. 12, Dec. 1990, cover page and pp. L2322-L2324, "A Model for SiN.sub.x CVD Film Growth Mechanism by Using SiH.sub.4 and NH.sub.3 Source Gases," Akihiko Ishitani et al.
Breneman R. Bruce
Everhart B.
NEC Corporation
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