Method of making a six transistor static random access memory ce

Details Method of making a six transistor static random access memory ce Method of making a six transistor static random access memory ce

1992-10-05

1994-07-19

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 40, 437200, 148DIG59, H01L 2170, H01L 2700

Patent

active

053309294

ABSTRACT:
The present invention includes a static random access memory cell and a method of forming the memory cell, wherein the memory cell may comprise an active region and a first layer. The active region including a first segment, a second segment, and a third segment, wherein 1) the first segment has an adjacent end and a distal end; 2) the second segment is generally parallel to the first segment, and has an adjacent end and a distal end; and 3) the third segment is generally perpendicular to the first direction, wherein the adjacent end of the first segment lies near one end of the third segment, wherein the adjacent end of the second segment lies near the other end of the third segment. The first layer has the a shape similar to the active region except that the first layer does not lie over the first and second segments near the distal ends. The present invention also includes a static random access memory cell and a method of forming the memory cell, wherein the memory cell may comprise shared gate electrodes that overlap one another without electrically contacting each other.

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