Fishing – trapping – and vermin destroying
Patent
1992-05-05
1994-07-19
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 59, 437 47, 437 60, 437203, H01L 2170, H01L 2700
Patent
active
053309278
ABSTRACT:
A static random access memory with a double vertical channel structure capable of providing a highly integrated memory element and a method of the same. On a substrate of a first conductivity type, first and second layers of the same conductivity type are formed, in order. On respective surfaces of the three layers, impurity diffusion regions are formed, centers of which are located on a vertical line. The first layer having the second impurity diffusion region and the second layer having the third impurity diffusion region are removed at their center portions, except for their opposite side portions, thereby forming trenches. In these trenches, gate electrodes and a ground electrode are formed. Accordingly, the first impurity diffusion region and the remaining opposite side portions of second and third impurity diffusion regions become source/drain regions, while the remaining opposite side portions of first and second layers become a double vertical channel region.
REFERENCES:
patent: 4829017 (1989-05-01), Malhi
patent: 4914058 (1990-04-01), Blanchard
patent: 4920065 (1990-04-01), Chin et al.
Chaudhuri Olik
Goldstar Electron Co. Ltd.
Tsai H. Jey
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