Fishing – trapping – and vermin destroying
Patent
1992-03-18
1994-07-19
Hearn, Brian E.
Fishing, trapping, and vermin destroying
427 44, 427161, 427192, 427200, H01L 21265
Patent
active
053309219
ABSTRACT:
A method of fabricating a semiconductor device wherein after forming a titanium silicide thin film on a silicon substrate, dopant impurities are implanted into the silicon substrate through the titanium silicide thin film so as to form shallow p.sup.+ -n junctions in the silicon substrate. At least one of the following conditions (1) to (3) is satisfied: (1) forty to seventy percent of the total implant dose is within the n-type silicon substrate; (2) the projected range is set at the depth corresponding to 90% to 125% of the titanium silicide film thickness; and (3) the dopant dose that comes to rest within the n-type silicon substrate is in the range of 2.0.times.10.sup.15 /cm.sup.2 to 3.5.times.10.sup.15 /cm.sup.2.
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N. Kobayashi et al., 1986 Symposium on VLSI Tech., Digest of Tech. Papers, IEEE Cat. No.: 86, May 28-30, 1986, pp. 49-50 "Comparison of TiSi.sub.2 and WSi.sub.2 Silicided Shallow Junctions for Sub-Micron CMOSs".
V. Probst et al., Appl. Phys. Letter, vol. 52, No. 21, pp. 1803-1805, May 23, 1988 "Limitations of TiSi2 as a Source for Dopant Diffusion".
Ogawa Shin-ichi
Yoshida Takehito
Hearn Brian E.
Matsushita Electric - Industrial Co., Ltd.
Picardat Kevin M.
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