Semiconductor device

Details Semiconductor device Semiconductor device

1987-10-19

1990-03-06

Larkins, William D.

357 51, 357 59, H01L 2704, H01L 2978, G11C 1140

Patent

active

049070576

ABSTRACT:
A semiconductor device having a semiconductor substrate, wherein first and second insulating gate FET transistor connected respectively, in series with first and second polycrystalline silicon layers acting as loads of first and second inverters are formed. The first polycrystalline silicon layer is provided above a gate electrode of the second insulation gate FET transistor, and the second polycrystalline silicon layer is provided above a gate electrode of the first insulation gate FET transistor.

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"A 2K.times.8-Bit Static Ram", T. Ohzone et al., IEEE IEDM, Tech. Digest, Dec. 1978, pp. 360-363.
Denshi Gijutsu, vol. 15, No. 11, Nov. 1973, Special Issue on IC Memory and Applications Technology, pp. 25-28.
A Fault-Tolerant 64K Dynamic Random-Access Memory Cenker et al., IEEE Transactions on Electron Devices, vol. ED-26, No. 6, Jun. 1979, pp. 853-860.
A Novel 4K Static RAM with Submilliwatt Standby Power, Caywood et al., IEEE Transactions on Electron Devices, vol. ED-26, No. 6, Jun. 1979, pp. 861-864.

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