Semiconductor device with enlarged corners to provide enhanced p

Details Semiconductor device with enlarged corners to provide enhanced p Semiconductor device with enlarged corners to provide enhanced p

1982-12-20

1985-08-06

Clawson, Jr., Joseph E.

357 20, 357 42, 357 52, H01L 2990

Patent

active

045339325

ABSTRACT:
A method is provided by the present invention for manufacturing a semiconductor device which includes supplying an impurity for forming an impurity area in a semiconductor substrate wherein the amount of the impurity defining the corners of said area is adjusted so that the shape of said corners is controlled. In this method, adjustment of the amount of the impurity may be accomplished by supplying the impurity to said substrate by using a mask whose corners are enlarged or reduced for increasing or reducing the opening area of the mask. The adjustment of the amount of the impurity may alternatively be accomplished by supplying an impurity of conductivity type opposite to that of said impurity to the places where the corners are to be formed.

REFERENCES:
patent: 3214652 (1965-10-01), Knowles
patent: 3404295 (1968-10-01), Warner
patent: 3461324 (1969-08-01), Barry
patent: 3538398 (1970-11-01), Whiting
patent: 3832732 (1974-08-01), Roberts
patent: 4066918 (1978-01-01), Heuner et al.
patent: 4361846 (1982-11-01), Tsukuda

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