Process for fabricating semiconductor devices

Details Process for fabricating semiconductor devices Process for fabricating semiconductor devices

1996-09-03

1998-03-31

Dang, Thi

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438731, H05H 100

Patent

active

057338213

ABSTRACT:
A downflow-type ashing apparatus comprises a microwave guide for feeding microwaves, a plasma generating chamber for generating O.sub.2 plasmas by the microwaves fed into the microwave guide, and an ashing reaction chamber for ashing by the oxygen atom radicals in the O.sub.2 plasmas. The entire inside of the wall of the Al ashing reaction chamber is coated with quartz film 16. An Al shower head with a number of small holes formed so as to form a shower for passing the oxygen atom radicals from the plasma generating chamber into the ashing reaction chamber has the entire surface coated with quartz film. The apparatus can conduct a required treatment at a stable high treating rate using oxygen atom radicals in oxygen plasmas generated by radio frequencies or microwaves.

REFERENCES:
patent: 4491496 (1985-01-01), LaPorte et al.
patent: 4512868 (1985-04-01), Fujimura et al.
patent: 4946549 (1990-08-01), Bachman et al.
patent: 4983254 (1991-01-01), Fujimura et al.
patent: 5006220 (1991-04-01), Hijikata et al.
patent: 5024748 (1991-06-01), Fujimura
patent: 5047115 (1991-09-01), Charlet et al.
patent: 5304279 (1994-04-01), Coultas et al.
patent: 5366585 (1994-11-01), Robertson et al.

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