Semiconductor tandem solar cells with metal silicide barrier

Details Semiconductor tandem solar cells with metal silicide barrier Semiconductor tandem solar cells with metal silicide barrier

1989-01-23

1990-03-06

Mintel, William

357 59, 357 71, 357 67, 357 58, H01L 2714

Patent

active

049070525

ABSTRACT:
A heat-resistant multijunction semiconductor device comprising a p-layer, a n-layer and a diffusion-blocking layer, the diffusion-blocking layer being provided between the p-layer and the n-layer. The semiconductor device can reduce the deterioration in quality which is caused by the diffusion of dopant atoms in the p-layer and n-layer, respectively, into the other layer.

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