Internal voltage dropping circuit for semiconductor device

Details Internal voltage dropping circuit for semiconductor device Internal voltage dropping circuit for semiconductor device

1992-07-14

1994-04-05

Sikes, William L.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307265, 307269, 323315, G05F 316

Patent

active

053008235

ABSTRACT:
A control circuit for an internal voltage dropping circuit for a semiconductor load circuit includes a first transistor which turns on or off so as to permit or inhibit current from flowing in the internal voltage dropping circuit in accordance with an active/standby switch signal. A pulsating control signal having a specified duty ratio is generated and coupled to the control circuit while a semiconductor device in the load circuit is in a standby mode. The control circuit is intermittently activated at the specified duty ratio when the semiconductor device is on standby so that a current consumption can be reduced in accordance with the duty ratio.

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Furuyama et al, "A New on-chip Voltage Converter for Submicrometer High-Density DRAM's" IEEE Journal of Solid-State Circuits, vol. SC-22, No. 3, Jun. 1987.
Roberts, Alan L., IEEE International Solid-State Circuits Conference, Digest of Technical Papers, 1987 pp. 252-253.

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