Solid state image sensor with overflow protection and high resol

Details Solid state image sensor with overflow protection and high resol Solid state image sensor with overflow protection and high resol

1980-10-09

1983-02-08

Munson, Gene M.

357 30, H01L 2978, H01L 2714, H01L 3100

Patent

active

043731678

ABSTRACT:
A plurality of photoelectric conversion elements are arranged on a semiconductor substrate and a reverse bias voltage is supplied between the photoelectric conversion elements and the substrate. The excess signal carriers generated at the photoelectric conversion elements flow into the substrate which serves as a drain region to prevent the blooming phenomenon.

REFERENCES:
patent: 3845295 (1974-10-01), Williams et al.
patent: 3866067 (1975-02-01), Amelio
patent: 3896474 (1975-07-01), Amelio et al.
patent: 3896485 (1975-07-01), Early

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