Method of making a semiconductor device with moisture impervious

Details Method of making a semiconductor device with moisture impervious Method of making a semiconductor device with moisture impervious

1993-12-14

1998-03-31

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437231, 437978, H01L 2144

Patent

active

057337977

ABSTRACT:
A moisture impervious film 24 such as silicon nitride is formed under an interlayer insulating film, covering the active region of an IC chip. The interlayer insulating film is formed, for example, by lamination of a silicon oxide film, a spin-on-glass (SOG) film, and another silicon oxide film. Moisture (H.sub.2 O) is intercepted by the moisture impervious film and does not reach the active region. It is possible to avoid the conductivity type inversion at the surface of a p-type well region in the active region and to suppress the corrosion of wiring layers, improving the reliability of the IC chip. The moisture impervious film is not limited to be formed at the layer under the silicon oxide film, but it is sufficient only if the film is formed at the layer under the SOG film.

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