Memory card with latch-up protection

Registers – Records – Conductive

Patent

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Details

235487, 361101, 365226, H02H 308, G06K 1907

Patent

active

053007654

ABSTRACT:
A memory card with a memory element utilizing a CMOS type electric field effect transistor comprises an overcurrent detecting device for detecting the size of current flowing through a power source circuit in order to immediately stop an overcurrent through the power source circuit when a latch-up phenomenon occurs in the memory element and a switch to open the power source circuit when the overcurrent is detected.

REFERENCES:
patent: 3311787 (1967-03-01), Gunderman
patent: 4353105 (1982-10-01), Black
patent: 4587640 (1986-05-01), Saitoh
patent: 4611302 (1986-09-01), Bockett-Pugh
patent: 4713719 (1987-12-01), Kugelman
patent: 4772783 (1988-09-01), Ono et al.
patent: 4912346 (1990-03-01), Mizuta
patent: 4916662 (1990-04-01), Mizuta
patent: 4922367 (1990-05-01), Hidaka
patent: 4962485 (1990-10-01), Kato et al.
patent: 5025344 (1991-06-01), Maly et al.
patent: 5144585 (1992-09-01), Min et al.
"IC Memory Card Guideline"; Japan Electrical Industry Development Association; 1986.

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