Fluorine plasma oxidation of residual sulfur species

Metal working – Method of mechanical manufacture – Electrical device making

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29590, 148187, 156643, 156665, C23F 102

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active

045010617

ABSTRACT:
A method for stripping an organic photoresist layer from a semiconductor device comprises oxidation of the photoresist layer with oxygen plasma and subsequent removal of residual sulfur species using a fluorine-containing plasma.

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Suzuki et al., Jap. Jr. Appl. Physics., 16 (1977) 1979.

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