Production method of an HEMT semiconductor device

Details Production method of an HEMT semiconductor device Production method of an HEMT semiconductor device

1992-09-24

1994-04-05

Quach, T. N.

Fishing, trapping, and vermin destroying

437 20, 437 39, 437 41, 437175, 437203, 437229, 437912, H01L 21338

Patent

active

053004450

ABSTRACT:
A particle beam irradiates a thermohardening resin and selectively hardens the thermohardening resin of the implanted region. The non-hardened resin not irradiated is removed with high selectivity and an inverted pattern of the hardened resin remains as a mask. In one embodiment, a gate electrode is produced in an aperture pattern produced by transfer of the inverted pattern and source and drain electrodes are provided at other aperture patterns to form an HEMT having a narrow gate self-aligned with the source and drain electrodes.

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