Process for depositing titanium nitride film by CVD

Coating processes – Coating by vapor – gas – or smoke

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

4272551, 4271261, 427314, C23C 1600

Patent

active

053003217

ABSTRACT:
A process which is capable of depositing a titanium nitride film of a high quality at a high deposition rate by low temperature chemical vapor deposition is provided. The titanium nitride film is deposited using a gas source comprising a compound of the general formula:

REFERENCES:
patent: 5080927 (1992-01-01), Ikeda et al.
patent: 5178911 (1993-01-01), Gordon et al.
patent: 5194642 (1993-03-01), Winter et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for depositing titanium nitride film by CVD does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for depositing titanium nitride film by CVD, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for depositing titanium nitride film by CVD will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-509606

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.