MOSFET Light detecting device having a Schottky junction

Details MOSFET Light detecting device having a Schottky junction MOSFET Light detecting device having a Schottky junction

1981-08-18

1985-01-29

James, Andrew J.

357 15, 357 59, 357 23, 357 67, 357 71, H01L 2714, H01L 2948, H01L 2904, H01L 2348

Patent

active

044969643

ABSTRACT:
A device for detecting light having an improved sensitivity and a method for producing the device. N.sup.+ source and drain regions are formed on a P-type silicon substrate. The substrate is then covered with an oxidation resistant layer of SiO.sub.2. A layer of Pt-Si is then deposited between the source and drain regions and a P-type polysilicon layer is deposited on the Pt-Si layer. The device is then annealed to form a Schottky junction between the polysilicon layer and the Pt-Si layer following which a gate electrode is formed on the polysilicon layer.

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R. R. Shah et al, "P-N Junction and Schottky Barrier Diode Fabrication in Laser Recrystallized Polysilicon on SiO.sub.2 ", IEEE Electron Device Letters, vol. EDL-2, (1981), pp. 159-161.

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