High density memory with field shield

Details High density memory with field shield High density memory with field shield

1985-10-31

1988-06-14

James, Andrew J.

357 49, 357 59, 357 53, 357 54, 357 45, H01L 2978

Patent

active

047515589

ABSTRACT:
A memory cell formed in a groove or trench in a semiconductor substrate is provided which includes a storage capacitor located at the bottom and along the lower portion of the sidewalls of the trench, a bit/sense line disposed at the surface of the semiconductor substrate adjacent to the trench, a transfer device or transistor located on the sidewall of the trench between the capacitor and the bit/sense line and a field shield for electrically isolating the storage capacitor from an adjacent cell formed in the same semiconductor substrate.

REFERENCES:
patent: 3387286 (1968-06-01), Dennard
patent: 3811076 (1974-05-01), Smith, Jr.
patent: 3841926 (1974-10-01), Garnache et al.
patent: 4225945 (1980-09-01), Kuo
patent: 4271418 (1981-06-01), Hiltpold
patent: 4327476 (1982-05-01), Iwai et al.
patent: 4335450 (1982-06-01), Thomas
patent: 4397075 (1983-08-01), Fatula et al.
patent: 4462040 (1984-07-01), Ho et al.
patent: 4672410 (1987-06-01), Miura et al.
V. L. Rideout, IBM Technical Disclosure Bulletin, vol. 21, No. 9, Feb. 1979, pp. 3823-3825, "Double Polysilicon Dynamic Random-Access Memory Cell with Increased Charge Storage Capacitance".
G. V. Clarke et al., IBM Technical Disclosure Bulletin, vol. 17, No. 9, Feb. 1975, pp. 2579-2580, "Capacitor for Single FET Memory Cell".
C. G. Jambotkar, IBM Technical Disclosure Bulletin, vol. 25, No. 2, Jul. 1982, pp. 593-596, "Very Dense One-Device FET Memory Cell".
B. El-Kareh et al., IBM Technical Disclosure Bulletin, vol. 26, No. 9, Feb. 1984, pp. 4699-4701, "Trench Node One-Device Memory Cell Process".
U.S. patent application Ser. No. 182,724, filed 8/80 to S. A. Abbas et al.

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