Wire-bonded semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond

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Details

257786, H01L 2349

Patent

active

060052937

ABSTRACT:
The present invention provides a wire-bonding structure of a semiconductor device comprising short and long bonding-wires. The short bonding-wires are provided for electrical connections between outer-positioned electrode bonding pads of the semiconductor device and inner-positioned inner lead bonding pads of longer inner leads. The long bonding-wires are provided for electrical connections between inner-positioned electrode bonding pads of the semiconductor device and outer-positioned inner lead bonding pads of shorter inner leads so that the short bonding-wires and the long bonding-wires area alternately aligned. The short bonding-wires rise to a first top level from the outer-positioned electrode bonding pads and slope down gradually from the first top level onto the inner-positioned inner lead bonding pads. The long bonding-wires rise to a second top level higher than the first level from the inner-positioned electrode bonding pads and slope down gradually from the second top level onto the outer-positioned inner lead bonding pads, whereby the long bonding-wires are kept in higher level than and differ in three-dimensional position from the short bonding-wires.

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patent: 5757082 (1998-05-01), Shibata

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