Method of making semiconductor integrated circuit, pattern detec

Details Method of making semiconductor integrated circuit, pattern detec Method of making semiconductor integrated circuit, pattern detec

1993-08-24

1995-07-11

Rosenberger, Richard A.

Optics: measuring and testing

By alignment in lateral direction

With registration indicia

G03F 900, H01L 2130

Patent

active

054326087

ABSTRACT:
According to the present invention, in making alignment between a semiconductor integrated circuit wafer and a mask or a reticle in light exposure of the wafer with a monochromatic light such as g-, i- or h-line of a mercury lamp, using a reduced stepping exposure system, light from a predetermined pattern on the wafer is taken out to an off-axis position and observed according to Through-the-Lens method; in this case as a characteristic feature of the invention, the observation light taken out from below the reticle is passed through chromatic aberration correcting lenses, thereby permitting the use of a polychromatic or continuous spectrum light.

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Donald H. Jacobs, Fundamentals of Optical Engineering, pp. 42-45, McGraw-Hill, New York, 1943.

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