Multi-level ECL series gating with temperature-stabilized source

Details Multi-level ECL series gating with temperature-stabilized source Multi-level ECL series gating with temperature-stabilized source

1986-10-31

1988-06-14

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307310, 307455, 323907, H03K 301, H03K 326, H03K 19086

Patent

active

047514043

ABSTRACT:
In a multi-level ECL series gating circuit with three levels of gating which operates over specified operating circuit voltage and operating circuit temperature ranges, provision is made for stabilizing the magnitude of the circuit source current over the operating voltage and temperature ranges by regulating the bias voltage which determines the circuit source current. The bias voltage is regulated according to the inverse of the operating temperature to account for the temperature characteristics of the base-to-emitter diode in the transistor generating the circuit current. The magnitude of the bias voltage over the temperature range never reaches a level which will send the circuit current transistor into saturation at any circuit voltage in the operating range.

REFERENCES:
patent: 4150309 (1979-04-01), Tokuda
patent: 4585957 (1986-04-01), Ooms
patent: 4628248 (1986-12-01), Birrittella et al.
patent: 4639661 (1987-01-01), Williams et al.
patent: 4644249 (1987-02-01), Chang

Affiliated with

Also associated with

Rating

Multi-level ECL series gating with temperature-stabilized source does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multi-level ECL series gating with temperature-stabilized source, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-level ECL series gating with temperature-stabilized source will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-506575