Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1982-08-19

1985-08-06

Andrews, Melvyn J.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29580, 148DIG50, 148DIG85, 156643, 156648, 156653, 156657, 357 50, H01L 2176

Patent

active

045327017

ABSTRACT:
A method of manufacturing a semiconductor device which comprises a step of forming a first groove in a semiconductor layer, a step of filling the first groove with a first insulating film, a step of selectively etching the first insulating film in the first groove to form at least one second groove having a small width, and a step of filling the second groove with a second insulating film to form an isolation layer having a large width and substantially flush with the semiconductor layer.

REFERENCES:
patent: 4222792 (1980-09-01), Lever et al.
patent: 4394196 (1983-07-01), Iwai
patent: 4419813 (1983-12-01), Iwai

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