Method of making ultrashort FET using oblique angle metal deposi

Details Method of making ultrashort FET using oblique angle metal deposi Method of making ultrashort FET using oblique angle metal deposi

1984-06-22

1985-08-06

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29579, 148 15, 148187, 148DIG82, 357 91, H01L 21283, H01L 2122, H01L 21265

Patent

active

045326983

ABSTRACT:
The combined use of an angularly deposited mask with a subsequent angular conductivity conversion operation extending partially under the mask permits both shorter dimensions and the ability to accommodate the straggle location change when subsequent processing steps occur. The mask is deposited at a low angle with respect to a planar surface, a subsequent conductivity conversion, such as ion implantation, extends under the mask, the mask is removed and a smaller gate is positioned in its location, the gate being smaller than the distance from the source to the point where the conversion extended under the mask, providing thereby an ultra-short gate FET.

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patent: 4430791 (1984-02-01), Dockerty
J. Vac. Sci. & Tech. 19, (3), pp. 693-695, (1981)-"A Simple Method for Fabricating Submicron Lines", by J. L. Speidell.
IBM Technical Disclosure Bulletin, vol. 16, No. 10, Mar. 1974, pp. 3287-3288, "Lateral Nonuniform Doping of Semiconductor Structures by Ion Implantation", by Brack et al.
IBM Technical Disclosure Bulletin, vol. 20, No. 6, Nov. 1977, p. 2454, "Means to Ion Implant Thin Polycrystalline Silicon Gates Without Implanting Ions into Insulating Layer Beneath Gate", by J. A. VanVechten.

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