Magnetic spin transistor

Details Magnetic spin transistor Magnetic spin transistor

1994-11-29

1995-07-11

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

360113, 324249, 324252, H01L 2722

Patent

active

054323738

ABSTRACT:
A magnetic spin transistor, usable as a memory cell, magnetic pick-up head, or a current switch, that includes a trilayer planar structure of a conductive, nonferromagnetic layer (16) sandwiched between two ferromagnetic layers (12, 14) of different coercivities. A biasing current pumped between one of the ferromagnetic layers and the nonferromagnetic layers produces a voltage on the other ferromagnetic layer. The polarity of the voltage depends on the relative magnetic polarization of the two ferromagnetic layers. As a memory cell, current passing through adjacent lines magnetize the ferromagnetic layer of lower coercivity. As a magnetic pick-up head, an adjacent magnetic recording track supplies the magnetic field sufficient to switch the lower-coercivity ferromagnetic layer.

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patent: 5134533 (1992-07-01), Friedrich et al.
patent: 5206590 (1993-04-01), Dieny et al.
patent: 5251088 (1993-10-01), Coutellier et al.
Hayt, Jr., Engineering Electromagnetics, 1989, pp. 278-282.
J. M. Daughton, "Magnetoresistive memory technology," Thin Solid Films, 1992, vol. 216, pp. 162-168.
M. Johnson et al., "Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface," Physical Review B, 1988, vol. 37, pp. 5312-5325.
M. Johnson et al., "Spin-injection experiment," Physical Review B, 1988, vol. 37, pp. 5326-5335.

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