Process for making contacts and interconnections using direct-re

Details Process for making contacts and interconnections using direct-re Process for making contacts and interconnections using direct-re

1985-09-11

1988-06-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437201, 437192, 148DIG147, H01L 21283

Patent

active

047511982

ABSTRACT:
Metal contacts and interconnections for semiconductor integrated circuits are formed by a process using direct-reacted silicide to increase step or sidewall coverage. A thin layer of titanium or the like is deposited, extending into a contact hole, then polysilicon is deposited over the titanium coating the vertical sides of steps or apertures. A second thin layer of titanium is deposited, then a heat treatment forms silicide to create a titanium silicide layer, including conductive sidewalls or a plug. Metal contacts and interconnections then engage the direct-reacted silicide rather than relying upon step coverage.

REFERENCES:
patent: 3740835 (1973-06-01), Duncan
patent: 3918149 (1975-11-01), Roberts
patent: 4180596 (1979-12-01), Crowder et al.
patent: 4322453 (1982-03-01), Miller
patent: 4398341 (1983-08-01), Geipel, Jr. et al.
patent: 4507853 (1985-04-01), McDavid
patent: 4545116 (1985-10-01), Lau
Ku, "Ohmic Contacts for Small, Shallow Structure Devices" IBM Technical Disc. Bull. vol. 22, No. 4, 9/1979.

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