Make-link programming of semiconductor devices using laser enhan

Details Make-link programming of semiconductor devices using laser enhan Make-link programming of semiconductor devices using laser enhan

1986-09-24

1988-06-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437193, 437192, 437922, 148DIG55, 357 71, 357 59, H01L 21306, H01L 21326

Patent

active

047511974

ABSTRACT:
A semiconductor device is programmed by a laser beam which causes an insulator between two conductors on a silicon substrate to be permanently altered, as by breakdown of the insulator. The conductors may be metals such as aluminum or tungsten, and the insulator is a layer of deposited or thermal silicon oxide. The breakdown may be enhanced by voltage applied between the conductors while the laser beam is focused on the structure.

REFERENCES:
patent: 3740523 (1973-06-01), Cohen et al.
patent: 4107726 (1978-08-01), Schilling
patent: 4146902 (1979-03-01), Tanimoto et al.
patent: 4240094 (1980-12-01), Mader
patent: 4387503 (1983-06-01), Aswell et al.
patent: 4424578 (1984-01-01), Miyamoto
patent: 4455194 (1984-06-01), Yabu et al.
patent: 4489479 (1984-12-01), Shields et al.
patent: 4489481 (1984-12-01), Janes
patent: 4507756 (1985-03-01), McElroy
patent: 4561906 (1985-12-01), Calder et al.
patent: 4569120 (1986-02-01), Stacy et al.
patent: 4585490 (1986-04-01), Raffel et al.
Wu, W. "Personalizable Semiconductor Device . . . " IBM TDB, vol. 23, No. 6, Nov. 1980, p. 2336.
Wu, W. "Laser Personalized Bipolar PLA", IBM TDB, vol. 21, No. 6, Nov. 78, pp. 2340-2341.
Ghandhi, S., "VLSI Fabrication Principles", 1983, pp. 458-461.

Affiliated with

Also associated with

Rating

Make-link programming of semiconductor devices using laser enhan does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Make-link programming of semiconductor devices using laser enhan, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Make-link programming of semiconductor devices using laser enhan will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-505032