Method of manufacturing a heterojunction bipolar transistor

Details Method of manufacturing a heterojunction bipolar transistor Method of manufacturing a heterojunction bipolar transistor

1987-06-25

1988-06-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

357 34, 357 16, 437133, 437228, 148DIG11, H01L 21265, H01R 2120

Patent

active

047511958

ABSTRACT:
A method of manufacturing a heterojunction bipolar transistor in which a collector region, a base region and an emitter region are successively formed on a compound semiconductor substrate, forming the emitter region by epitaxial growth in a concave portion formed on an electrode leading region at the base region.

REFERENCES:
Nagata et al., "A New Self-Aligned Structure AlGaAs/GaAs HBT for High Speed Digital Circuits", Gallium Arsenide and Related Compounds 1985, Proceedings of the Twelfth International Symposium, pp. 589-594, 1986.
Nagata et al., "A New Self-Aligned AlGaAs/GaAs HBT for High Speed Digital Circuits," Electrical & Electronics Abstracts, Sep. 1986, p. 3579.

Affiliated with

Also associated with

Rating

Method of manufacturing a heterojunction bipolar transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a heterojunction bipolar transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a heterojunction bipolar transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-504998