Basic cell for BiCMOS gate array

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307443, 307465, 307466, 257804, H03K 1902

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active

053410416

ABSTRACT:
An improved cell for use in a mask programmable gate array is disclosed herein. The preferred cell comprises two compute sections, each comprising two pairs of medium size P and N-channel transistors, two small N-channel transistors, and a single small P-channel transistor. Each cell also comprises a high efficiency drive section containing a single bipolar pull-up transistor, a large N-channel pull-down transistor, and a small P-channel transistor. By using this cell, an extremely high compute capability per die area is achieved.

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