Ion beam scan control

Details Ion beam scan control Ion beam scan control

1994-02-08

1995-07-11

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

25044011, H01J 3720

Patent

active

054323525

ABSTRACT:
A scan control for use with an ion implantation system. A servo motor having an output shaft scans a wafer support through an ion beam to controllably treat the wafer. A digital signal processor monitors an encoder output corresponding to motor shaft orientation and compares this position with a desired position of the wafer support. An error signal modifies a motor energization signal based on this comparison. Velocity damping based upon sensed motor speed and wafer support speed smooths the scan motion via a second motor energization correction.

REFERENCES:
patent: 4125828 (1978-11-01), Resnick et al.
patent: 4749867 (1988-06-01), Matsushita et al.
patent: 5229615 (1993-07-01), Brune et al.
patent: 5262651 (1993-11-01), Frazier et al.
patent: 5323012 (1994-06-01), Auslander et al.
patent: 5326979 (1994-07-01), Kawasaki et al.
Ray, A., Dykstra, J. & Simonton, R., "Overview of Eaton NV-8200P High Beam Purity, Parallel Scanning Implanter." To the best of Applicant's knowledge, this article was presented at a conference on Sep. 21, 1992 in Gainesville, Fla.

Affiliated with

Also associated with

Rating

Ion beam scan control does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion beam scan control, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion beam scan control will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-504931