Thin silicon carbide layer on an insulating layer

Details Thin silicon carbide layer on an insulating layer Thin silicon carbide layer on an insulating layer

1992-02-03

1994-08-23

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257613, 257623, 257627, H01L 310312, H01L, H01L, H01L, H01L, H01L, H01L

Patent

active

053410009

ABSTRACT:
A present invention is intended to provide a semiconductor device having a structure in which devices are formed in a thin layer (18) of silicon carbide having reduced crystal faults on a silicon substrate (2). A silicon dioxide layer (4) is formed on the semiconductor substrate (2) (FIG. 2A). The silicon dioxide layer (4) is then provided with openings (14) (FIG. 2D). Silicon carbide is grown from the openings until it covers the insulating layer to thereby form a silicon carbide crystal layer (16) (FIG. 3A). The silicon carbide crystal layer (16) is then covered by a SOG layer 20 over the whole surface and subjected to anisotropic etching, whereby a thin layer of silicon carbide is left on the substrate (2) (FIG. 3C). Semiconductor circuit devices are formed in this thin layer (18). Since the layer (18) is grown laterally and has almost uniform plane orientation, it can provide a semiconductor device formed therein with superior electrical characteristics.

REFERENCES:
patent: 4874718 (1989-10-01), Inoue
patent: 4983538 (1991-01-01), Gotou
patent: 4997787 (1991-03-01), Eshita

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