Method for CMOS well drive in a non-inert ambient

Details Method for CMOS well drive in a non-inert ambient Method for CMOS well drive in a non-inert ambient

1996-01-17

1999-12-21

Mulpuri, Savitri

Semiconductor device manufacturing: process

Gettering of substrate

438477, H01L 21324

Patent

active

060048689

ABSTRACT:
Disclosed is an improved CMOS fabrication method that allows an implanted well in a bare silicon wafer to be simultaneously, driven annealed and denuded in a single process step. More specifically, a single step drive-anneal-denude (DAD) process is accomplished using a non-inert ambient environment. The DAD process is accomplished in a combination argon/hydrogen ambient environment. This process causes the silicon wafer to roughen slightly and is followed by an oxidation step, that optionally takes place in a combination argon/oxygen ambient environment to smooth out the silicon surface. The oxidation step may also optionally act as a pad-oxide or screening oxide for subsequent fabrication.

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