Method of fabricating multi-layered structure having single crys

Details Method of fabricating multi-layered structure having single crys Method of fabricating multi-layered structure having single crys

1996-03-08

1999-12-21

Wilczewski, Mary

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

438311, 438164, 438157, 438977, H01L 21331, H01L 21336, H01L 2120

Patent

active

060048654

ABSTRACT:
Disclosed is an multi-layered SOI substrate, which includes a supporting substrate, and a first insulator, a semiconductor film, a second insulator and a single crystalline semiconductor film (SOI film) which are layered on the main surface of the supporting substrate The SOI substrate is formed by a direct bonding technique, and a bipolar transistor and an MOS transistor are formed using the single crystalline semiconductor film (SOI layer). The extremely shallow junction can be formed without epitaxial growth, thereby significantly increasing the operation speed of the semiconductor device at a low cost.

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