Method of making high density semiconductor structure

Details Method of making high density semiconductor structure Method of making high density semiconductor structure

1990-12-21

1992-12-01

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG12, 148DIG135, 228116, 228179, 437 86, 437188, H01L 213205

Patent

active

051680785

ABSTRACT:
A method of forming a high density semiconductor structure including one or more buried metal layers. One or more metal layers may be formed on a first semiconductor substrate, with the metal layer or layers being insulated from one another and from the substrate. One or more metal layers may be formed on the surface of a second substrate which may or may not be a semiconductor substrate. The topmost metal layers, either or both of which may have an insulating layer thereon, are placed in contact and heated in an oxidizing ambient atmosphere to form a bond therebetween. One or more vias connect the buried metal layers to the active devices in the substrates. The buried metal layers may form buried power and ground planes and buried metallization patterns for device interconnection.

REFERENCES:
patent: 3725743 (1973-04-01), Murayama
patent: 3766445 (1973-10-01), Reuter et al.
patent: 3997381 (1976-12-01), Wanlass
patent: 4200474 (1980-04-01), Morris
patent: 4245768 (1981-01-01), Sater
patent: 4247034 (1981-01-01), Burkart et al.
patent: 4288470 (1981-09-01), Bate et al.
patent: 4411962 (1983-10-01), Johnson
patent: 4481283 (1984-11-01), Kerr et al.
patent: 4495219 (1985-01-01), Kato et al.
patent: 4596604 (1986-06-01), Akiyama et al.
patent: 4636833 (1987-01-01), Nishioka et al.
patent: 4704512 (1987-11-01), Lisec
patent: 4732312 (1988-03-01), Kennedy et al.
patent: 4891329 (1990-01-01), Reisman et al.
Sorab Ghandi, VLSI Fabrication Principles, John Wiley & Sons, New York, N.Y. (1983), pp. 214-216.
Nayak et al., Metal-to-Metal Bonding Using an Oxidizing Ambient Atmosphere, Journal of the Electrochemical Society, vol. 135, No. 4, Apr. 1988, pp. 1023-1025.
Joining and Recrystallization of Si Using the Thermomigration Process, T. Mizrah, 1980 American Institute of Physics, J. Appl. Phys. 51(2), Feb. 1980, pp. 1207-1210.
Promissing New Fabrication Process Developed For Stacked LSI's, M. Yasumoto et al., IEDM Technical Digest, 1984, pp. 816-819.
Field-Assisted Bonding Below 200.degree. C. Using Metal and Glass Thin-Film Interlayers, W. Y. Lee et al., Applied Physics Letters, 50(9), Mar. 2, 1987, pp. 522-524.
W. P. Mazara, G. Goetz, A. Caviglia and J. B. McKittrick, "Bonding of Silicon Wafers for Silicon-On Insulator", Journal of Applied Physics (Nov. 15, 1988), vol. 64, No. 10, pp. 4943-4950.
Thomas R. Anthony, "Dielectric Isolation of Silicon by Anodic Bonding", Aug. 1, 1985, Journal of Applied Physics, pp. 1240-1247.

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