Photomask, exposing method using photomask, and manufacturing me

Details Photomask, exposing method using photomask, and manufacturing me Photomask, exposing method using photomask, and manufacturing me

1995-09-29

1998-03-31

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430311, 430322, G03F 900

Patent

active

057336873

ABSTRACT:
When a pattern to be exposed onto a wafer is a periodic pattern, a periodic mask pattern substantially twice as large as the pattern to be exposed in the wafer is formed on a photomask by means of light transmission portions and halftone portions. The halftone portions are formed such that a phase difference between exposure light transmitted through the light transmission portions and exposure light transmitted through the halftone portions is set to be substantially 180.degree.. Moreover, in order to eliminate zeroth order diffraction light, amplitude transmittance t of the halftone portion is set to t.apprxeq.A1/A2 wherein A1 is an area of the halftone portion and A2 is an area of the light transmission portion. Further, amplitude transmittance t of the halftone portion is changed, and an amount of exposure light to the photomask is controlled, so that L&S patterns and isolated patterns are simultaneously transferred onto the wafer by one photomask.

REFERENCES:
patent: 4360586 (1982-11-01), Flanders et al.
patent: 5429896 (1995-07-01), Hasegawa et al.

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