Method for producing a laterally limited single-crystal region w

Details Method for producing a laterally limited single-crystal region w Method for producing a laterally limited single-crystal region w

1993-11-19

1995-07-11

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

117 95, 117923, H01L 2120

Patent

active

054321204

ABSTRACT:
For producing a laterally limited, single-crystal region on a substrate, for example the collector of a bipolar transistor or the active region of a MOS transistor, a mask layer having an opening is produced on the surface of a substrate. The surface of the substrate is exposed within the opening. The cross-section of the opening parallel to the surface of the substrate at the surface of the substrate projects laterally beyond that cross-section at the surface of the mask layer. The sidewall of the opening proceeds essentially perpendicularly relative to the surface of the substrate in the region of the surface of the mask layer and has a step-shaped profile in cross-section perpendicularly relative to the surface of the substrate. The single-crystal region is formed by selective epitaxy within the opening.

REFERENCES:
patent: 3639186 (1972-02-01), Forster et al.
patent: 4871685 (1989-10-01), Taka et al.
patent: 4885617 (1989-12-01), Mazure-Espejo et al.
patent: 5090932 (1992-02-01), Dieumegard et al.
"Silicon Wafer Preparation for Low-Temperature Selective Epitaxial Growth," Galewski et al., IEEE Trans. on Semicon. Man., vol. 3, No. 3, Aug. 1990 (pp. 93-97).
"Growth Condition Dependence of SEG Planarity and Electrical Characteristics," Stivers et al., Proc. of 19th Int. Cong. on CVD, Oct. 1987, pp. 389-397.
"Selective Silicon Deposition for the Megabit Age," Borland et al., Solid State Techn., Jan. 1990, pp. 73-78.
"Chemical Vapor Deposition of Selective Epitaxial Silicon Layers," Pai et al., J. Electrochem. Soc., vol. 137, No. 3, mar. 1990, pp. 971-976.
"A Submicron Dual Buried Layer Twin Well CMOS SEG Process," Manoliu et al., IDEM Digest, 1987, pp. 20-23.

Affiliated with

Also associated with

Rating

Method for producing a laterally limited single-crystal region w does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing a laterally limited single-crystal region w, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing a laterally limited single-crystal region w will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-503260