Positive type o-quinone diazide photo-resist containing antistat

Details Positive type o-quinone diazide photo-resist containing antistat Positive type o-quinone diazide photo-resist containing antistat

1991-08-05

1992-12-01

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Diazo reproduction, process, composition, or product

Composition or product which contains radiation sensitive...

430165, 430192, 430193, G03F 7022, G03C 161

Patent

active

051680300

ABSTRACT:
Disclosed herein is an antistatic photo-resist containing an antistatic agent. Since antistatic photo-resist according to the present invention is hardly charged, it can be suitably used as a mask in implanting ions into semiconductor substrate.

REFERENCES:
patent: 4142892 (1979-03-01), Paul
patent: 4296194 (1981-10-01), Harper et al.
patent: 4431725 (1984-02-01), Tachikawa et al.
patent: 4575480 (1980-03-01), Kotani et al.
patent: 4701399 (1987-10-01), Nagano et al.
patent: 4828960 (1989-05-01), Hertog
Japanese Patent Application No. 242793/86 Summarized Translation of Notice of Rejection (Official Action Dated Apr. 14, 1992).

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