Method of producing semiconductor device

Details Method of producing semiconductor device Method of producing semiconductor device

1994-05-23

1995-07-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 70, 437 72, 437 73, 148DIG106, H01L 2176

Patent

active

054321174

ABSTRACT:
An insulating film and a silicon nitride film are formed on a semiconductor substrate. A resist film is patterned on the silicon nitride film. Thereafter, using the patterned resist film as a mask, the silicon nitride film is removed in such a manner that the film thickness is the maximum at its center portion and becomes gradually small downwardly in the neighborhood of the ends of the resist film pattern. The silicon nitride film which is thick at its center portion is adopted as a mask for selective oxidation.

REFERENCES:
patent: 3899363 (1975-08-01), Dennard et al.
patent: 4044454 (1977-08-01), Magdo
patent: 4085498 (1978-04-01), Rideout
patent: 4160987 (1979-07-01), Denard et al.
patent: 4354309 (1982-10-01), Gardiner et al.
patent: 4373965 (1983-02-01), Smigelski
patent: 4426764 (1984-01-01), Kosa et al.
patent: 4484979 (1984-11-01), Stoker
patent: 4812418 (1989-03-01), Pfiester et al.
"An Improved LOCOS Technology Using Thin Oxide and Polysilicon Buffer Layers", by N. Hoshi et al., pp. 78-83, with English-language abstract.

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