Fishing – trapping – and vermin destroying
Patent
1992-05-28
1995-07-11
Fourson, George
Fishing, trapping, and vermin destroying
437 69, H01L 21336
Patent
active
054321093
ABSTRACT:
A method for manufacturing a floating gate field effect transistor includes the steps of forming a plurality of first band-like insulating films over a semiconductor substrate in a parallel, spaced-apart relation and a second insulating film between the first insulating films and having a thickness smaller than that of the first insulating film, forming a plurality of first conductive layers selectively over the insulating layer and a plurality of second band-like conductive layers over the first conductive layers in a spaced-apart relation and in a direction perpendicular to the first and second insulating films, the first conductive layer having a width substantially the same as that of the second conductive layer, coating a first resist over a whole surface of a resultant structure and patterning it so as to protect a substantive source region, removing the first insulating film at those areas not covered by the first resist, removing the first resist, forming a third insulating film by a thermal oxidation, and implanting an impurity ion into an element formation area in the semiconductor substrate in a self-aligned relation to the source region of a first conductivity type and forming a first impurity region, the conductivity type of the impurity being opposite to that of the substrate.
REFERENCES:
patent: 4258466 (1981-03-01), Kuo et al.
patent: 4317273 (1982-03-01), Guterman et al.
patent: 4326331 (1982-04-01), Guterman
patent: 4500899 (1985-02-01), Shirai et al.
patent: 5045489 (1991-09-01), Gill et al.
Fourson George
Kabushiki Kaisha Toshiba
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