Method of fabricating self-aligned field-plate isolation between

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437 52, H01L 2176

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active

053407687

ABSTRACT:
The structure and method of this invention provide, for example, electrical isolation between active elements in adjacent rows and/or columns of an integrated circuit by use of a self-aligned field-plate conductor formed over and insulated from the substrate regions that are bounded by the channel regions of field-effect transistors in adjacent rows and that are bounded by the bitlines forming those transistors in a column. The field-plate conductor is formed, for example, in a strip that extends over the isolation areas and thermal insulator regions between row lines of the memory cell array. The field-plate conductor strip is connected to a voltage supply that has a potential with respect to the potential of the semiconductor substrate which causes the isolation areas to be nonconductive. Component density may be increased over that of prior-art structures and methods.

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patent: 5139962 (1992-08-01), Tanaka
patent: 5208176 (1993-05-01), Ahmad et al.
patent: 5240873 (1993-08-01), Shinji

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