Method of manufacturing EEPROM memory device

Details Method of manufacturing EEPROM memory device Method of manufacturing EEPROM memory device

1992-12-15

1994-08-23

Fourson, George

Fishing, trapping, and vermin destroying

437 44, 437 45, 437 29, 437 30, 437 52, H01L 21335

Patent

active

053407601

ABSTRACT:
This invention discloses EEPROM which increases an erasing voltage V.sub.pp to be applied in a data write cycle by increasing an avalanche breakdown voltage between a source region and a semiconductor substrate in order to improve erasing efficiency, and employs a structure which strengthens the electric field at the edge of a drain region in order to let hot carrier be easily generated and to improve writing efficiency.

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